Description N-Channel Power MOSFET designed by HR-Micro Semiconductor Company,according to the advanced Trench Technology.This devices provide an excellent Gate charge and Rds(on),which leads to extremely communication and conduction losses.So it is very suitable for AC/DC power conversion,load switch and industrial power applications.The package form is DFN5X6 which accords with the RoHS standard. Features ? Low FOM RDS(on)×Qgd ? 100% avalanche tested ? Easy to use/drive ? RoHS compliant

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